Opto Diode announces a new single active area photodiode featuring 100 mm2- the SXUV100. The highly sensitive device permits detection to 1 nm and provides a remarkably stable response after exposure to EUV/UV conditions. Its best applications include detection of 13.5 nm wavelengths or any high power density source monitoring between 1 nm - 150 nm. The device is operational from 1nm to 1000 nm, with peak photon responsivity at 0.27A/W (at 1 nm) and 0.33 A/W (at 850 nm). Shunt resistance (Rsh) @ ± 10 mV is 10 MOhms (min.), the capacitance is typically 6 nanofarads (nF) and the response time is typically 250 nanoseconds. The SXUV100’s operating and storage temperatures range from -10 degrees C to 40 degrees C (ambient) and from -20 degrees C to 80 degrees C (in nitrogen or vacuum conditions). The maximum junction temperature is 70 degrees C and the lead-soldering temperature is 260 degrees C at 0.080 in. from the case for 10 seconds.
Opto Diode Corporation
Opto Diode announces a new single active area photodiode featuring 100 mm2- the SXUV100.